SUD35N05-26L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
100
V GS = 10 thru 6 V
100
T C = - 55 °C
80
5V
80
25 °C
60
40
20
0
2V
4V
3V
60
40
20
0
125 °C
0
2
4
6
8
10
0
1
2 3 4 5 6
7
8
60
V DS - Drain-to-Source Voltage (V)
Output Characteristics
0.04
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
T C = - 55 °C
50
0.03
40
25 °C
V GS = 4.5 V
30
125 °C
0.02
V GS = 10 V
20
0.01
10
0
0.00
0
20
40 60
80
100
0
20
40 60
80
100
1500
I D - Drain Current (A)
Transconductance
20
I D - Drain Current (A)
On-Resistance vs. Drain Current
1200
900
600
C iss
16
12
8
V DS = 25 V
I D = 35 A
300
0
C rss
C oss
4
0
0
11 22 33 44
55
0
10
20
30
40
V DS - Drain-to-Source Voltage (V)
Capacitance
Q g - Total Gate Charge (nC)
Gate Charge
Document Number: 71443
S12-1360-Rev. C, 11-Jun-12
For more information please contact: pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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